TriQuint said it received its DARPA contract to advance GaN research and develop new generations of compound semiconductor circuits through the Nitride Electrical Next-Generation Technology (NEXT) program.
Dr. David Fanning, TriQuint's Program Manager for NEXT, described the different segments of the new DARPA contract and key performance milestones. "The initial phase will run two years, pursuing devices that can operate at 300 GHz with essential yield levels of a small circuit. The 18-month Phase II program will push the operating frequency to 400 GHz while increasing yield and circuit size. The third and final 12-month segment will seek to extend the operating frequency to 500 GHz while also substantially increasing yield and circuit size," he said.
Dr. Fanning explained that an aspect of the NEXT program will be to develop enhancement-depletion (E/D) mode GaN circuits, similar to the E/D circuits that TriQuint uses for functionality and power handling in its Gallium Arsenide devices.
The TriQuint NEXT team will include IQE, a manufacturer of GaN semiconductor wafers. TriQuint said it will also team with University of Notre Dame Professors Patrick Fay, Debdeep Jena, Greg Snider and Huili Xing to explore alternative wafer materials and circuit designs. University of Illinois Professor Ilesanmi Adesida will assist with work to develop fabrication processes.
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